PAD Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – PICO AMPERE DIODES

PAD/JPAD/SSTPAD Series
Absolute Maximum Ratings^a
Forward Current:
Total Device Dissipation:
Operation Junction Temp:
(PAD . . . . . . . . . . . . . . . . . . . . . . 50 mA
(JPAD/SSTPAD ) . . . . . . . . . . . . . 10 mA
(PAD)^b . . . . . . . . . . . . . . . . . . . 300 mW
(JPAD/SSTPAD)^b . . . . . . . . . . 350 mW
(PAD) . . . . . . . . . . . . . . . . –55 to 175_C
(JPAD/SSTPAD )^c . . . . . . –55 to 150_C
Lead Temperature (¹/₁₆” from case for 10 sec.) . . . . . . . . . . . . . 300_C
Notes:
a. T_A = 25_C unless otherwise noted.
b. Derate 2 mW/_C above 25_C.
c. Derate 2.8 mW/_C above 25_C.
Specifications^a
Parameter
Static
Symbol
Reverse Current
I_R
Reverse Breakdown Voltage
BV_R
Forward Voltage Drop
V_F
Dynamic
Reverse Capacitance
C_R
Test Conditions
Limits
Min Typ^b Max Unit
PAD1
–0.3 –1
V_R = –20 V
PAD5/JPAD5/SSTPAD5
PAD50/JPAD50
–1
–5
pA
–5
–50
SSTPAD100
–10 –100
PAD1/PAD5
–45 –60
I_R = –1 mA
I_F = 1 mA
SSTPAD5/100
All Others
–30 –55
V
–35 –55
0.8 1.5
V_R = –5V, f = 1 MHz
PAD1/PAD5
All Others
0.5 0.8
pF
1.5
2
Notes:
a. T_A = 25_C unless otherwise noted.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NT/NPA
Typical Characteristics
–1000
Reverse Current vs. Reverse Voltage
PAD/JPAD/SSTPAD5
–100
I_R @ 125_C
PAD1
Reverse Current vs. Temperature
–100
V_R = –20 V
–10
–10
–1
–0.1
0
2
PAD/JPAD/SSTPAD5
I_R @ 25_C
–6
–12
–18
V_R (V)
PAD1
–24
–30
–1
All Others
PAD1/5
–0.1
–0.01
–55 –35 –15 5 25 45 65 85 105 125
T_A – Temperature (_C)
Siliconix
S-52424—Rev. G, 14-Apr-97