MUR820PBF_11 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrafast Rectifier, 8 A FRED Pt

VS-MUR820PbF
Vishay Semiconductors ^{Ultrafast Rectifier, 8 A FRED Pt®}
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
I_F = 1.0 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
-
I_F = 0.5 A, I_R = 1.0 A, I_REC = 0.25 A
t_rr
T_J = 25 °C
-
-
-
20
T_J = 125 °C
-
34
Peak recovery current
T_J = 25 °C
I_F = 8 A
-
1.7
I_RRM
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 160 V
-
4.2
Reverse recovery charge
T_J = 25 °C
Q_rr
T_J = 125 °C
-
23
-
75
MAX.
35
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
junction to ambient
R_thJA
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
-
3.0
-
50
0.5
-
2.0
-
0.07
-
-
12
(10)
MUR820
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94523
[e-mail], [e-mail], [e-mail]
Revision: 04-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000