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MUR120-E3 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Low forward voltage drop
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MUR120-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous
forward voltage
Maximum instantaneous reverse
current at rated DC blocking voltage
Maximum reverse recovery time
1.0 A
TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
VF (1)
IR (1)
trr
Maximum forward recovery time
IF = 1.0 A, dI/dt = 100 A/μs, Irec to 1.0 V
tfr
Note
(1) Pulse test: tp = 300 μs pulse, duty cycle  2 %
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance junction to ambient
RJA (1)
Note
(1) Lead length = 3/8" on PCB with 1.5" x 1.5" (38.1 mm x 38.1 mm) copper surface
MUR120
0.875
0.710
2.0
50
25
35
25
MUR120
27
UNIT
V
μA
ns
ns
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
MUR120-E3/54
0.41
54
MUR120-E3/73
0.41
73
BASE QUANTITY
4000
2000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
3.0
2.0
1.0
0
0
25 50 75 100 125 150 175
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
50
40
30
20
10
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 15-Aug-13
2
Document Number: 88683
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