MMBZ6V8DC Datasheet, PDF (2/2 Pages) Vishay Siliconix – Dual Zener Transient Voltage Suppressor Diodes for ESD Protection

MMBZ6V8DC/A thru MMBZ27VDC/A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Type
Breakdown Voltage
Working
Max Reverse
Max Forward
VBR (Volts)⁽¹⁾
Peak
Reverse
Voltage
Max
Reverse
Leakage
Max
Reverse
Voltage
@ IRSM⁽²⁾
Max
Surge ^{(Clamping Voltage)} Temperature
Voltage
@IT _{VRWM Current IR Current IPP}
VC
Coefficient of ^VF ^@IF
Min
Nom Max mA (Volts)
(nA)
(Amps)
(Volts)
VBR (mV/°C) (Volts) (mA)
MMBZ6V8D
6.48
6.8
7.14 1.0
4.5
500
2.5
9.6
3.4
1.1 200
MMBZ15VD
14.30 15.00 15.80 1.0
12.8
100
1.9
21.2
16
0.9 200
MMBZ27VD
25.65 27.00 28.35 1.0
22.0
80
1.0
38.0
30
1.1 200
Notes: (1) VBR measured at pulse test current IT at an ambient temperature of 25°C
(2) Surge current waveform per Figure 2 and derate per Figure 3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Layout for RΘJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in. (0.3mm)
0.30 (7.5)
0.12 (3)
FIG. 1 - STEADY STATE POWER DERATING CURVE
300
250
ALUMINA SUBSTRATE
200
0.59 (15)
0.03 (0.8)
0.47 (12)
.04 (1) _{.08 (2)}
.04 (1)
.08 (2)
150
FR-5 BOARD
100
50
0.2 (5)
Dimensions in inches (millimeters)
0.06 (1.5)
0.20 (5.1)
0
0
25 50 75 100 125 150 175
T, Temperature (°C)
FIG. 2 - PULSE WAVEFORM
100
50
tr
PEAK VALUE – IRSM
PULSE WIDTH (tp) is DEFINED
as that POINT WHERE the PEAK
CURRENT DECAYS to 50% of
IRSM tr≤10µs
HALF VALUE – IRSM
2
tp
00
1
2
3
4
t, TIME (ms)
www.vishay.com
2
FIG. 3 - PULSE DERATING CURVE
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Document Number 88358
21-May-02