MMBD7000-V_12 Datasheet, PDF (2/3 Pages) Vishay Siliconix – Small Signal Switching Diode, Dual

MMBD7000-V
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Typical thermal resistance,
junction to ambient air
Maximum junction temperature
Storage temperature range
1) _{Device on alumina substrate}
2) _{On FR-5 board}
Symbol
R_thJA
R_thJA
T_j
T_stg
Value
417¹⁾
556²⁾
150
- 55 to + 150
Unit
K/W
K/W
°C
°C
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Reverse breakdown voltage
I_R = 100 A
V_(BR)
100
V
V_R = 50 V
I_R
1
A
Leakage current
V_R = 100 V
I_R
3
A
V_R = 50 V, T_j = 125 ° C
I_R
100
A
I_F = 1 mA
V_F
0.55
0.70
V
Forward voltage
I_F = 10 mA
V_F
0.67
0.82
V
I_F = 100 mA
V_F
0.75
1.10
V
Diode capacitance
V_R = 0, f = 1 MHz
C_D
1.5
pF
Reverse recovery time
I_F = 10 mA to I_R = 10 mA,
I_rr = 1 mA, R_L = 100 
I_rr
4
ns
Package Dimensions in millimeters (inches): SOT-23
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.5 (0.020)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
0.95 (0.037)
0.95 (0.037)
www.vishay.com
For technical questions within your region, please contact one of the following: Document Number 85736
2
[e-mail], [e-mail], [e-mail] _{Rev. 1.4, 13-May-11}
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000