MMBD7000-G Datasheet, PDF (2/3 Pages) Vishay Siliconix – Silicon epitaxial planar diode

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MMBD7000-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Reverse breakdown voltage
Leakage current
Forward voltage
Reverse recovery time
Diode capacitance
I_R = 100 μA
V_R = 50 V
V_R = 100 V
V_R = 50 V, T_j = 125 °C
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
I_F = I_R = 10 mA, i_R = 1 mA,
R_L = 100 
V_R = 0 V, f = 1 MHz
V_(BR)
I_R
I_R
I_R
V_F
V_F
V_F
t_rr
C_D
100
0.55
0.67
0.75
MAX.
1000
3
100
0.70
0.82
1.10
4
1.5
UNIT
V
nA
μA
μA
V
V
V
ns
pF
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.5 (0.020)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Rev. 1.2, 15-May-13
2
Document Number: 85873
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