MMBD6050 Datasheet, PDF (2/5 Pages) Zowie Technology Corporation – SWITCHING DIODE

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MMBD6050
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Reverse breakdown voltage
Forward voltage
Reverse leakage current
Reverse recovery time
Diode capacitance
I_R = 100 μA
I_F = 1 mA
I_F = 100 mA
V_R = 50 V
I_F = I_R = 10 mA, i_R = 1 mA
V_R = 0
V_(BR)
V_F
V_F
I_R
t_rr
C_D
70
0.55
0.85
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
100
10000
1000
MAX.
0.7
1.1
100
4
2.5
UNIT
V
V
V
nA
ns
pF
T_j = 25 ° C
f = 1 kHz
10
100
10
1
1
18861
10
100
I_F - Forward Current (mA)
Fig. 1 - Dynamic Forward Resistance vs. Forward Current
1
0.01
0.1
1
10
100
18662
I_F - Forward Current (mA)
Fig. 3 - Dynamic Forward Resistance vs. Forward Current
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160 180 200
18889
T_amb - Ambient Temperature ( °C )
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
1.1
T_j = 25 ° C
f = 1 MHz
1.0
0.9
0.8
0.7
0
18664
2
4
6
8
10
V_R - Reverse Voltage (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.6, 15-May-13
2
Document Number: 85735
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