MMBD6050-V_12 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Switching Diode

MMBD6050-V
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse breakdown voltage
I_R = 100 μA
V_(BR)
70
V
Forward voltage
I_F = 1 mA
I_F = 100 mA
V_F
0.55
V_F
0.85
0.7
V
1.1
V
Reverse leakage current
V_R = 50 V
I_R
0.1
μA
Reverse recovery time
I_F = I_R = 10 mA, I_rr = 1 mA
t_rr
4
ns
Diode capacitance
V_R = 0
C_D
2.5
pF
Typical Characteristics
T_amb = 25 °C unless otherwise specified
100
10
1
1
10
100
18861
I_F - Forward Current (mA)
Figure 1. Dynamic Forward Resistance vs. Forward Current
10000
1000
T_j = 25 ° C
f = 1 kHz
100
10
1
0.01
0.1
1
10
100
18662
I_F - Forward Current (mA)
Figure 3. Dynamic Forward Resistance vs. Forward Current
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160 180 200
18889
T_amb - Ambient Temperature ( °C )
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
1.1
T_j = 25 ° C
f = 1 MHz
1.0
0.9
0.8
0.7
0
2
4
6
8
10
18664
V_R - Reverse Voltage (V)
Figure 4. Relative Capacitance vs. Reverse Voltage
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2
For technical questions within your region, please contact one of the following: Document Number 85735
[e-mail], [e-mail], [e-mail] _{Rev. 1.4, 12-Aug-10}