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MCL101A_12 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diodes
MCL101A, MCL101B, MCL101C
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
On PC board
50 mm x 50 mm x 1.6 mm
RthJA
320
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Breakdown Voltage
IR = 10 µA
Leakage current
VR = 50 V
VR = 40 V
VR = 30 V
Forward voltage drop
IF = 1 mA
IF = 15 mA
Diode capacitance
VR = 0 V, f = 1 MHz
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100
Tj = 125 °C
10
Tj = 100 °C
1
Tj = 75 °C
Tj = 50 °C
0.1
Tj = 25 °C
0.01
0 5 10 15 20 25 30 35 40 45 50
16204
VR - Reverse Voltage (V)
Figure 1. Reverse Current vs. Reverse Voltage
Part
Symbol Min.
Typ.
Max.
Unit
MCL101A
V(BR)
60
V
MCL101B
V(BR)
50
V
MCL101C
V(BR)
40
V
MCL101A
IR
200
nA
MCL101B
IR
200
nA
MCL101C
IR
200
nA
MCL101A
VF
410
mV
MCL101B
VF
400
mV
MCL101C
VF
390
mV
MCL101A
VF
1000
mV
MCL101B
VF
950
mV
MCL101C
VF
900
mV
MCL101A
CD
2
pF
MCL101B
CD
2.1
pF
MCL101C
CD
2.2
pF
2.0
1.8
Tj = 25 °C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 5 10 15 20 25 30 35 40 45 50
16205
VR - Reverse Voltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
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For technical questions within your region, please contact one of the following: Document Number 85627
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.4, 05-Aug-10