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MBRS130LTRPBF_10 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Schottky Rectifier, 1.0 A
VS-MBRS130LTRPbF
Vishay High Power Products Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
1A
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
TJ = 100 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.420
0.470
0.300
0.370
1
10
20
200
2.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ (1)
Maximum storage temperature range
Maximum thermal resistance,
junction to lead
TStg
RthJL (2)
DC operation
See fig. 4
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Approximate weight
Marking device
Case style SMB (similar to DO-214AA)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
- 55 to 125
- 55 to 150
UNITS
°C
25
°C/W
80
0.10
g
0.003
oz.
V13L
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2
For technical questions, contact: diodestech@vishay.com
Document Number: 94317
Revision: 05-Mar-10