MBRD650CTPBF_11 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 3 A

VS-MBRD650CTPbF, VS-MBRD660CTPbF
Vishay Semiconductors
Schottky Rectifier, 2 x 3 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
Maximum reverse leakage current per leg
See fig. 2
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
SYMBOL
V_FM ⁽¹⁾
I_RM ⁽¹⁾
C_T
L_S
dV/dt
TEST CONDITIONS
VALUES
3A
0.7
T_J = 25 °C
6A
0.9
3A
0.65
T_J = 125 °C
6A
0.85
T_J = 25 °C
0.1
V_R = Rated V_R
T_J = 125 °C
15
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C 145
Measured lead to lead 5 mm from package body
5.0
Rated V_R
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J ⁽¹⁾, T_Stg
Maximum thermal resistance,
junction to case
per leg
per device
R_thJC
DC operation
See fig. 4
Maximum thermal resistance,
junction to ambient
R_thJA
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
VALUES UNITS
- 40 to 150 °C
6
3
°C/W
80
0.3
g
0.01
oz.
MBRD650CT
MBRD660CT
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94314
[e-mail], [e-mail], [e-mail]
Revision: 14-Jan-11