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MBRA140TRPBF Datasheet, PDF (2/5 Pages) Vishay Siliconix – Schottky Rectifier, 1.0 A
MBRA140TRPbF
Vishay High Power Products Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
TEST CONDITIONS
1A
TJ = 25 °C
2A
1A
TJ = 100 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
TJ = 100 °C
TJ = 125 °C
TJ = TJ maximum
VR = Rated VR
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.55
0.71
0.5
0.65
0.49
0.63
0.5
10
26
0.36
104
38
2.0
10 000
UNITS
V
mA
V
mΩ
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL(2)
DC operation
See fig. 4
Maximum thermal resistance,
junction to ambient
RthJA
Approximate weight
Device marking
Case style SMA (similar D-64)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
VALUES
- 55 to 150
UNITS
°C
35
°C/W
80
0.07
g
0.002
oz.
V14
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94301
Revision: 14-Aug-08