MBR1090CT_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Common-Cathode High Voltage Schottky Rectifier

MBR1090CT, MBR10100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL MBR1090CT MBR10100CT
Maximum instantaneous forward voltage per diode ⁽¹⁾
I_F = 5.0 A
I_F = 5.0 A
T_C = 125 °C
T_C = 25 °C
V_F
0.75
0.85
Maximum reverse current per diode at working peak
reverse voltage ⁽²⁾
T_J = 25 °C
T_J = 100 °C
I_R
100
6.0
Notes
(1) _{Pulse test: 300 µs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
UNIT
V
µA
mA
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090CT
Typical thermal resistance per diode
R_θJC
MBR10100CT
4.4
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR10100CT-E3/4W
1.87
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
10
Resistive or Inductive Load
8
6
4
2
0
0
50
100
150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
120
T_J = T_J Max.
100
8.3 ms Single Half Sine-Wave
80
60
40
20
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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2
For technical questions within your region, please contact one of the following: Document Number: 89125
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Revision: 26-Apr-10