LL103A_10 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diodes

LL103A, LL103B, LL103C
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
I_R = 50 µA
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
V_R = 30 V
V_R = 20 V
V_R = 10 V
I_F = 20 mA
I_F = 200 mA
V_R = 0 V, f = 1 MHz
I_F = I_R = 50 to 200 mA,
recover to 0.1 I_R
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
1000
100
10
1
0.1
0.01
0.001
0 100 200 300 400 500 600 700 800 900 1000
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V_F - Forward Voltage (mV)
Figure 1. Forward Current vs. Forward Voltage
Part
Symbol
Min
Typ.
Max
Unit
LL103A V_(BR)
40
V
LL103B V_(BR)
30
V
LL103C V_(BR)
20
V
LL103A
I_R
5
µA
LL103B
I_R
5
µA
LL103C
I_R
5
µA
V_F
370
mV
V_F
600
mV
C_D
50
pF
t_rr
10
ns
10 000
1000
100
Reverse voltage
10
LL103A V_R = 40 V
LL103B V_R = 30 V
LL103C V_R = 20 V
1
0
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20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Figure 3. Reverse Current vs. Junction Temperature
5
4
3
2
1
0
0.0
0.5
1.0
1.5
2.0
16766
V_F - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
30
f = 1 MHz
25
20
15
10
5
0
0
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5
10 15 20 25 30
V_R - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
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2
For technical questions within your region, please contact one of the following: Document Number 85630
[e-mail], [e-mail], [e-mail] _{Rev. 1.5, 05-Aug-10}