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IRFZ44S_11 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Power MOSFET
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IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)a
RthJA
Maximum Junction-to-Case
RthJC
Note
a. When mounted on 1” square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 31 Ab
VDS = 25 V, ID = 31 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5 d
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VGS = 10 V
ID = 51 A, VDS = 48 V,
see fig. 6 and 13b
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
LS
VDD = 30 V, ID = 51 A,
Rg = 9.1 , RD = 0,55 ,
see fig. 10b
Between lead, and center of die contact
MIN.
60
-
2.0
-
-
-
-
15
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.06
-
V/°C
-
4.0
V
-
± 100 nA
-
25
μA
-
250
-
0.028 
-
-
S
1900
-
920
-
pF
170
-
-
67
-
18
nC
-
25
14
-
110
-
ns
45
-
92
-
7.5
-
nH
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
50d
A
-
-
200
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 51 A, VGS = 0 Vb
-
-
2.5
V
trr
-
TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μsb, d
120
180
ns
Qrr
-
530 800 nC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRFZ44, SiHFZ44 data and test conditions.
d. Calculated continuous current based on maximum allowable junction temperature.
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Document Number: 91293
S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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