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IRFR9024 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – P-Channel Enhancement Mode Field Effect Transistor
◁
IRFR9024, IRFU9024, SiHFR9024,
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 5.3 Ab
VDS = - 25 V, ID = - 5.3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz
VGS = - 10 V
ID = - 11 A, VDS = - 48 V,
see fig. 6 and 13b
VDD = - 30 V, ID = - 11 A,
RG = 18 Ω, RD = 2.5 Ω, see fig. 10b
Internal Drain Inductance
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN. TYP. MAX. UNIT
- 60
-
- 2.0
-
-
-
-
2.9
-
- 0.063
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.28
-
V
V/°C
V
nA
µA
Ω
S
-
570
-
-
360
-
pF
-
65
-
-
-
19
-
-
5.4
nC
-
-
11
-
13
-
-
68
-
ns
-
15
-
-
29
-
-
4.5
-
nH
-
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 8.8
A
-
-
- 35
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 8.8 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/µsb
100
200
ns
Qrr
-
0.32 0.64 µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91278
S-81377-Rev. A, 30-Jun-08
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