English
Language : 

IRFPE50 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=800V, Rds(on)=1.2ohm, Id=7.8A)
◁
IRFPE50, SiHFPE50
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.65
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.7 Ab
VDS = 100 V, ID = 4.7 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 7.8 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 400 V, ID = 7.8 A,
RG = 6.2 Ω, RD= 52 Ω
see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
MIN.
800
-
2.0
-
-
-
-
5.6
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.98
-
V/°C
-
4.0
V
-
± 100 nA
-
100
µA
-
500
-
1.2
Ω
-
-
S
3100
-
800
-
pF
490
-
-
200
-
24
nC
-
110
19
-
38
-
ns
120
-
39
-
5.0
-
nH
13
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
7.8
A
-
-
31
Body Diode Voltage
VSD
TJ = 25 °C, IS = 7.8 A, VGS = 0 Vb
-
-
1.8
V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 7.8 A,
dI/dt = 100 A/µsb
-
650 980 ns
-
3.8
5.7
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91248
S-81368-Rev. A, 21-Jul-08
 ▷