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IRFPC40 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A)
◁
IRFPC40, SiHFPC40
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.83
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.1 Ab
VDS = 100 V, ID = 4.1 Ab
600
-
-
V
-
0.70
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
100
µA
-
-
500
-
-
1.2
Ω
4.9
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
-
VGS = 10 V
ID = 6.2 A, VDS = 360 V,
see fig. 6 and 13b
-
-
-
VDD = 300 V, ID = 6.2 A ,
-
RG = 9.1 Ω, RD = 47 Ω, see fig. 10b
-
-
1300
-
160
-
pF
30
-
-
60
-
8.3
nC
-
30
13
-
18
-
ns
55
-
20
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
5.0
-
nH
-
13
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
6.8
A
-
-
27
Body Diode Voltage
VSD
TJ = 25 °C, IS = 6.8 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µsb
450
940
ns
Qrr
-
3.8
7.9
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91240
S-Pending-Rev. A, 26-Jun-08
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