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IRF9510SPBF Datasheet, PDF (2/9 Pages) Vishay Siliconix – Power MOSFET
◁
IRF9510S, SiHF9510S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = - 250 μA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 100 V, VGS = 0 V
VDS = - 80 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 2.4 Ab
VDS = - 50 V, ID = - 2.4 Ab
- 100
-
- 2.0
-
-
-
-
1.0
-
- 0.091
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
1.2
-
V
V/°C
V
nA
μA

S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
-
VDS = - 25 V,
-
f = 1.0 MHz, see fig. 5
-
-
VGS = - 10 V
ID = - 4.0 A, VDS = - 80 V,
see fig. 6 and 13b
-
-
-
VDD = - 50 V, ID = - 4.0 A,
-
Rg = 24 , RD = 11 , see fig. 10b
-
-
Between lead,
6 mm (0.25") from
D
-
package and center of
G
die contact
-
S
200
-
94
-
pF
18
-
-
8.7
-
2.2
nC
-
4.1
10
-
27
-
ns
15
-
17
-
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM
p - n junction diode
D
G
S
-
-
- 4.0
A
-
-
- 16
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 4.0 A, VGS = 0 Vb
-
-
- 5.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/μsb
82
160
ns
Qrr
-
0.15 0.30 μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
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Document Number: 91073
S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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