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IRF7705PBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultra Low On-Resistance
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IRF7705PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
-30 ––– –––
––– 0.015 –––
––– ––– 18
––– ––– 30
-1.0 ––– -2.5
V
V/°C
mΩ
V
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -8.0A ‚
VGS = -4.5V, ID = -6.0A ‚
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
13 ––– ––– S VDS = -10V, ID = -8.0A
IDSS
Drain-to-Source Leakage Current
––– ––– -15
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 58 88
ID = -8.0A
Qgs
Qgd
td(on)
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 10 ––– nC VDS = -15V
––– 9.0 –––
VGS = -10V‚
––– 18 27
VDD = -15V, VGS = -10V‚
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 35 53 ns ID = -1.0A
––– 270 405
RD = 15Ω
––– 128 190
RG = 6.0Ω ‚
Ciss
Input Capacitance
––– 2774 –––
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 418 ––– pF VDS = -25V
––– 270 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -1.5
––– -30
––– -1.2
36 54
34 50
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.5A, VGS = 0V ‚
TJ = 25°C, IF = -1.5A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t<10 sec
2
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