IL55B Datasheet, PDF (2/6 Pages) Siemens Semiconductor Group – PHOTODARLINGTON OPTOCOUPLER

IL55B/ 56B/ MOC8021
Vishay Semiconductors
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector (load) current
Power dissipation
Derate linearly from 25 °C
Test condition
Coupler
Parameter
Total power dissipation
Test condition
Derate linearly from 25 °C
Isolation test voltage (between
emitter and detector referred to
standard climate
23 °C/50 % RH, DIN 50014)
Creepage
Clearance
Tracking resistance, group III
(KC > 600 per VDE 110 § 6,
table 3 and DIN 54380/VDE
0330, part 1
Isolation resistance
Storage temperature
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
Operating temperature
Lead soldering time at 260 °C
Symbol
BV_CEO
BV_ECO
I_C
P_diss
Symbol
P_tot
V_ISO
R_IO
R_IO
T_stg
T_amb
T_sld
Value
80
5.0
125
150
2.0
Value
250
3.3
5300
≥7
≥7
10¹²
10¹¹
- 55 to + 150
- 55 to + 100
10
Unit
V
V
mA
mW
mW/°C
Unit
mW
mW/°C
V_RMS
mm
mm
Ω
Ω
°C
°C
sec.
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
I_F = 50 mA
V_R = 3.0 V
V_R = 0 V
Symbol
Min
Typ.
Max
Unit
V_F
1.25
1.5
V
I_R
0.1
10
µA
C_O
25
pF
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-emitter leakage
current
Test condition
I_C = 1.0 mA, I_F = 0
I_E = 100 µA, I_F = 0
V_CE = 60 V
Symbol
Min
Typ.
Max
Unit
BV_CEO
80
V
BV_ECO
5.0
10
V
I_CEO
1.0
µA
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2
Document Number 83637
Rev. 1.5, 26-Oct-04