IL440_08 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Optocoupler, Phototriac Output, Low Input Current

IL440
Vishay Semiconductors
Optocoupler, Phototriac Output,
Low Input Current
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Junction temperature
OUTPUT
P.W. < 10 µs
V_R
5.0
V
I_F
60
mA
I_FSM
3.0
A
P_diss
100
mW
T_j
100
°C
Peak off-state voltage
On-state RMS current
Peak surge current
Peak on-state current
Power dissipation
Junction temperature
COUPLER
IL440-4
V_DRM
400
V
IL440-5
V_DRM
400
V
IL440-6
V_DRM
400
V
I_D(RMS)
100
mA
t_p ≤ 10 ms
I_FSM
1.2
A
t_p/T = 0.01 ≤ 100 µs
I_DRM
2.0
A
P_diss
300
mW
T_j
125
°C
Isolation voltage, 1.0 s, per standard
climate 23 °C/50 % RH, DIN 50014
V_ISO
5300
V_RMS
Creepage distance
≥ 7.0
mm
Clearance distance
Isolation resistance
Total power dissipation
Storage temperature range
Ambient temperature
Junction temperature
Lead soldering temperature ⁽²⁾
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
2.0 mm from case, t < 10 s
≥ 7.0
mm
R_IO
≥ 10¹²
Ω
R_IO
≥ 10¹¹
Ω
P_tot
330
mW
T_stg
- 55 to + 125
°C
T_amb
- 40 to + 100
°C
T_j
100
°C
T_sld
260
°C
Notes
(1) _{Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.}
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this
document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) _{Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through}
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Reverse voltage
Junction capacitance
OUTPUT ⁽²⁾
I_F = 50 mA
V_F
1.25
V
I_R = 10 μA
V_R
5.0
V
V_R = 0 V, f = 1.0 MHz
C_j
50
pF
Peak on-state voltage
I_TM = 100 mA, I_FT = 30 mA
V_TM
1.5
3.0
V
Critical rate of rise of off-state voltage
I_F = 0, V_S = 240 V_RMS
I_F = 30 mA, V_S = 60 V_RMS
dV_cr/dt
dV_crq/dt
0.13
50
0.25
V/µs
V/µs
COUPLER
Holding current
I_F ≥ 10 mA, V_S ≥ 3.0 V
I_H
1.0
mA
Notes
(1) _{Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the}
device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
(2) _{Off-state output terminal voltage (see table 1.)}
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Document Number: 83631
Rev. 1.6, 18-Jan-08