IL400 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PHOTO SCR OPTOCOUPLER

IL400
Vishay Semiconductors
Output
Parameter
Reverse gate voltage
Anode voltage (DC or AC Peak)
Anode current
Surge anode current (10 ms duration)
Surge gate current (5.0 ms duration)
Power dissipation
Derate linearly from 25 °C
Test condition
Coupler
Parameter
Isolation voltage
Isolation resistance
Total package dissipation
Derate linearly from 25 °
Operating temperature
Storage temperature
Test condition
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
Symbol
V_RG
V_A
I_A
I_AS
I_GS
P_diss
Symbol
V_ISO
R_IO
R_IO
T_amb
T_stg
Value
6.0
400
100
1.0
200
200
2.11
Value
5300
> 10¹²
> 10¹²
250
2.63
- 55 to +100
- 55 to +150
Unit
V
V
mA
A
mA
mW
mW/°C
Unit
V_RMS
Ω
Ω
mW
mW/°C
°C
°C
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse voltage
Reverse current
Test condition
I_F = 20 mA
I _R = 10 µA
V_R = 5.0 V
Symbol
Min
Typ.
Max
Unit
V_F
1.2
1.5
V
V_R
5.0
V
I_R
10
µA
Output
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward blocking voltage
R_GK = 10 KΩ , T_A = 100 °C ,
V_DRM
400
V
I_d = 150 µA
Reverse blocking voltage
R_GK = 10 KΩ , T_A = 100 °C ,
V_DRRM
400
V
I_d = 150 µA
On-state voltage
I_T = 100 mA
V_t
1.2
V
Holding current
R_GK = 27 KΩ , V_FX = 50 V
I_H
500
µA
Gate trigger voltage
V_FX = 100 V, R_GK = 27 KΩ,
V_GT
R_L = 10 KΩ
0.6
1.0
V
Forward leakage current
R_GK = 27 KΩ , I_F = 0
I_D
0.2
2.0
µA
Reverse leakage current
R_GK = 27 KΩ , I_F = 0
I_R
0.2
2.0
µA
Gate trigger current
V_FX = 100 V, R_GK = 27 KΩ,
I_GT
R_L = 10 KΩ
20
50
µA
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Document Number 83626
Rev. 1.5, 26-Oct-04