IL211AT Datasheet, PDF (2/6 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

IL211AT/ 212AT/ 213AT
Vishay Semiconductors
Output
Parameter
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage
I_{CMAX DC}
I_CMAX
Power dissipation
Derate linearly from 25 °C
Test condition
t < 1.0 ms
Coupler
Parameter
Total package dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Soldering time at 260 °C
Test condition
(LED + Detector)
Symbol
BV_CEO
BV_ECO
V_CEO
I_{CMAX DC}
I_CMAX
P_diss
Symbol
P_tot
T_stg
T_amb
Value
30
7.0
70
50
100
150
2.0
Value
240
3.2
- 55 to +150
- 55 to +100
10
Unit
V
V
V
mA
mA
mW
mW/°C
Unit
mW
mW/°C
°C
°C
sec.
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
I_F = 10 mA
V_R = 6.0 V
V_R = 0
Symbol
Min
Typ.
Max
Unit
V_F
1.3
1.5
V
I_R
0.1
100
µA
C_O
13
pF
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector dark current
Collector-emitter capacitance
Test condition
I_C = 10 µA
I_E = 10 µA
V_CE = 10 V
V_CE = 0
Symbol
Min
Typ.
Max
Unit
BV_CEO
30
V
BV_ECO
7.0
V
I_CEO
C_CE
5.0
50
nA
10
pF
Coupler
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Saturation voltage, collector-emitter
I_F = 10 mA
V_CEsat
0.4
V
Isolation test voltage
1 sec.
V_ISO
3000
V_RMS
Capacitance (input-output)
C_IO
0.5
50
pF
Resistance input to output
R_IO
100
GΩ
Collector-emitter breakdown voltage
I_C = 10 µA
BV_CEO
30
V
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Document Number 83615
Rev. 1.5, 26-Oct-04