IL1 Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR OPTOCOUPLER

Optocoupler, Phototransistor Output,
with Base Connection
IL1/IL2/IL5
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
COUPLER
Package power dissipation
Derate linearly from 25 °C
P_tot
250
mW
3.3
mW/°C
Isolation test voltage (between emitter
and detector referred to standard climate
23 °C/50 % RH, DIN 50014)
V_ISO
5300
V_RMS
Creepage distance
≥ 7.0
mm
Clearance distance
≥ 7.0
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
CTI
175
Isolation resistance
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
R_IO
≥ 10¹²
Ω
R_IO
≥ 10¹¹
Ω
Storage temperature
T_stg
- 40 to + 150
°C
Operating temperature
T_amb
- 40 to + 100
°C
Junction temperature
T_j
100
°C
Soldering temperature ⁽²⁾
2.0 mm from case bottom
T_sld
260
°C
Notes
(1) _{Tamb = 25 °C, unless otherwise specified.}
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) _{Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through}
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance junction to lead
OUTPUT
I_F = 60 mA
V_F
1.25
1.65
V
I_R = 10 µA
V_BR
6.0
30
V
V_R = 6.0 V
I_R
0.01
10
µA
V_R = 0 V, f = 1.0 MHz
C_O
40
pF
R_thjl
750
K/W
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Collector emitter leakage voltage
Collector emitter saturation voltage
Base emitter voltage
DC forward current gain
DC forward current gain saturated
Thermal resistance junction to lead
COUPLER
V_CE = 5.0 V, f = 1.0 MHz
C_CE
V_CB = 5.0 V, f = 1.0 MHz
C_CB
V_EB = 5.0 V, f = 1.0 MHz
C_EB
V_CE = 10 V
I_CEO
I_CE = 1.0 mA, I_B = 20 µA
V_CEsat
V_CE = 10 V, I_B = 20 µA
V_BE
V_CE = 10 V, I_B = 20 µA
h_FE
200
V_CE = 0.4 V, I_B = 20 µA
h_FEsat
120
R_thjl
6.8
pF
8.5
pF
11
pF
5.0
50
nA
0.25
V
0.65
V
650
1800
400
600
500
K/W
Capacitance (input to output)
V_I-O = 0 V, f = 1.0 MHz
C_IO
0.6
pF
Insulation resistance
V_I-O = 500 V
R_S
10¹⁴
Ω
Note
T_amb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83612
Rev. 1.5, 08-May-08
For technical questions, contact: [e-mail]
www.vishay.com
295