HFA90NH40PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – HEXFRED® Ultrafast Soft Recovery Diode, 210 A

HFA90NH40PbF
Vishay High Power Products
HEXFRED^®
Ultrafast Soft Recovery Diode, 210 A
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5
T_J = 25 °C
t_rr
T_J = 125 °C
-
90
-
158
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
I_RRM
Q_rr
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 90 A
dI_F/dt = 200 A/µs
V_R = 200 V
-
9
-
15
-
420
-
1200
Peak rate of recovery current
See fig. 8
dI_(rec)M/dt
T_J = 25 °C
T_J = 125 °C
-
370
-
270
MAX.
140
240
17
30
1100
3200
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case
R_thJC
DC operation
See fig. 4
Typical thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Approximate weight
Mounting torque
Terminal torque
Case style
minimum
maximum
minimum
maximum
Non-lubricated threads
HALF-PAK module
VALUES
- 55 to 150
0.38
0.05
30
1.06
3 (26.5)
4 (35.4)
3.4 (30)
5 (44.2)
UNITS
°C
°C/W
g
oz.
N⋅m
(lbf ⋅ in)
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Document Number: 94044
Revision: 01-Aug-08