HFA30TA60CSPBF_10 Datasheet, PDF (2/8 Pages) Vishay Siliconix – HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A

VS-HFA30TA60CSPbF
Vishay High Power Products
HEXFRED^®
Ultrafast Soft Recovery Diode, 2 x 15 A
ELECTRICAL SPECIFICATIONS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
600
I_F = 15 A
-
Maximum forward voltage
V_FM
I_F = 30 A
See fig. 1
-
I_F = 15 A, T_J = 125 °C
-
Maximum reverse
leakage current
V_R = V_R rated
-
I_RM
See fig. 2
T_J = 125 °C, V_R = 0.8 x V_R rated
-
Junction capacitance
C_T
V_R = 200 V
See fig. 3
-
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
TYP.
-
1.3
1.5
1.2
1.0
400
25
8.0
MAX.
-
1.7
2.0
1.6
10
1000
50
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
t_rr
t_rr1
t_rr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 15 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
19
-
-
42
60
-
70
90
-
4.0
6.0
-
6.5
10
-
80
180
-
220
450
Peak rate of fall of recovery
current during t_b
See fig. 8
dI_(rec)M/dt1 T_J = 25 °C
dI_(rec)M/dt2 T_J = 125 °C
-
188
-
-
160
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Junction to case,
single leg conducting
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
T_lead
0.063" from case (1.6 mm) for 10 s
R_thJC
R_thJA
Typical socket mount
Weight
Mounting torque
Marking device
Case style D²PAK
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.7
UNITS
°C
-
0.85
K/W
-
80
2.0
-
0.07
-
12
-
(10)
HFA30TA60CS
g
oz.
kgf · cm
(lbf · in)
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Document Number: 94071
Revision: 22-Feb-10