HFA25TB60PBF Datasheet, PDF (2/6 Pages) International Rectifier – Ultrasfast, Soft Recovery Diode

HFA25TB60PbF
Vishay High Power Products
HEXFRED^®
Ultrafast Soft Recovery Diode, 25 A
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
V_BR
I_R = 100 µA
600
I_F = 25 A
-
Maximum forward voltage
V_FM
I_F = 50 A
See fig. 1
-
I_F = 25 A, T_J = 125 °C
-
Maximum reverse
leakage current
V_R = V_R rated
-
I_RM
See fig. 2
T_J = 125 °C, V_R = 0.8 x V_R rated
-
Junction capacitance
C_T
V_R = 200 V
See fig. 3
-
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
TYP.
-
1.3
1.5
1.3
1.5
600
55
8.0
MAX.
-
1.7
2.0
1.7
20
2000
100
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5, 6 and 16
t_rr
I_F = 1.0 A, dI_F/dt = 200 A/µs, V_R = 30 V
t_rr1
T_J = 25 °C
t_rr2
T_J = 125 °C
-
23
-
50
-
105
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
I_RRM1
I_RRM2
Q_rr1
Q_rr2
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 25 A
dI_F/dt = 200 A/µs
V_R = 200 V
-
4.5
-
8.0
-
112
-
420
Peak rate of fall of recover
curent during t_b
See fig. 11 and 12
dI_(rec)M/dt1
dI_(rec)M/dt2
T_J = 25 °C
T_J = 125 °C
-
250
-
160
MAX.
-
75
160
10
15
375
1200
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
T_lead
R_thJC
R_thJA
R_thCS
0.063” from case (1.6 mm) for 10 s
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.0
UNITS
°C
-
80
K/W
0.5
-
2.0
-
0.07
-
12
-
(10)
HFA25TB60
g
oz.
kgf · cm
(lbf · in)
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For technical questions, contact: [e-mail]
Document Number: 94065
Revision: 25-Jul-08