H11D1_07 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage

H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors ^{Optocoupler, Phototransistor Output,}
With Base Connection, High BV_CER Voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
INPUT
Reverse voltage
DC forward current
Surge forward current
t ≤ 10 µs
Power dissipation
OUTPUT
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
Insulation thickness between emitter
and detector
Creepage distance
Clearance distance
Comparative tracking index
Isolation resistance
Storage temperature range
Operating temperature range
Junction temperature
Soldering temperature
between emitter and detector,
refer to climate DIN 50014, part 2,
Nov. 74
per DIN IEC 112/VDE 0303, part 1
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
max. 10 s, dip soldering: distance
to seating plane ≥ 1.5 mm
PART
H11D1
H11D2
H11D3
H11D4
H11D1
H11D2
H11D3
H11D4
SYMBOL
V_R
I_F
I_FSM
P_diss
V_CE
V_CE
V_CE
V_CE
V_CBO
V_CBO
V_CBO
V_CBO
V_BEO
I_C
P_diss
VALUE
6
60
2.5
100
300
300
200
200
300
300
200
200
7
100
300
UNIT
V
mA
A
mW
V
V
V
V
V
V
V
V
V
mA
mW
V_ISO
R_IO
R_IO
T_stg
T_amb
T_j
T_sld
5300
≥ 0.4
≥7
≥7
175
≥ 10¹²
≥ 10¹¹
- 55 to + 150
- 55 to + 100
100
260
V_RMS
mm
mm
mm
Ω
Ω
°C
°C
°C
°C
Note
T_amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
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Document Number: 83611
Rev. 1.5, 19-Nov-07