H11D1-X007T Datasheet, PDF (2/8 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, with Base Connection, High BV Voltage

H11D1, H11D2, H11D3, H11D4
Optocoupler, Phototransistor _{Vishay Semiconductors}
Output, with Base Connection,
High BV_CER Voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
OUTPUT
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Power dissipation
COUPLER
H11D1
V_CE
300
V
H11D2
V_CE
300
V
H11D3
V_CE
200
V
H11D4
V_CE
200
V
H11D1
V_CBO
300
V
H11D2
V_CBO
300
V
H11D3
V_CBO
200
V
H11D4
V_CBO
200
V
V_BEO
7
V
I_C
100
mA
P_diss
300
mW
Isolation test voltage
between emitter and detector
V_ISO
5300
V_RMS
Insulation thickness between emitter
and detector
Creepage distance
≥ 0.4
mm
≥7
mm
Clearance distance
≥7
mm
Comparative tracking index
Isolation resistance
Storage temperature range
Operating temperature range
Junction temperature
Soldering temperature
per DIN IEC 112/VDE 0303, part 1
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
max. 10 s, dip soldering: distance
to seating plane ≥ 1.5 mm
175
R_IO
≥ 10¹²
Ω
R_IO
≥ 10¹¹
Ω
T_stg
- 55 to + 150
°C
T_amb
- 55 to + 100
°C
T_j
100
°C
T_sld
260
°C
Note
T_amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Reverse voltage
Reverse current
Capacitance
Thermal resistance
TEST CONDITION
I_F = 10 mA
I_R = 10 µA
V_R = 6 V
V_R = 0 V, f = 1 MHz
PART SYMBOL MIN.
V_F
V_R
6
I_R
C_O
R_thJA
TYP.
1.1
0.01
25
750
MAX.
1.5
10
UNIT
V
V
µA
pF
K/W
Document Number: 83611
Rev. 1.6, 10-Dec-08
For technical questions, contact: [e-mail]
www.vishay.com
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