H11C4 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Optocoupler, PhotoSCR Output, 400 V VRM, 5 A surge current

H11C4/ H11C5/ H11C6
Vishay Semiconductors
Output
Parameter
Reverse gate voltage
Anode voltage
RMS forward current
Surge anode current
Peak forward current
Surge gate current
Power dissipation
Derate linearly from 25°C
Test condition
DC or AC peak
10 ms duration
100 µs, 1% Duty Cycle
5.0 ms duration
Coupler
Parameter
Isolation test voltage (between
emitter and detector referred to
standard climate 23 °C/ 50 %
RH, DIN 50014)
Creepage
Clearance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Total package dissipation
Test condition
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
Derate linearly from 25 °C
Operating temperature range
Storage temperature range
Lead soldering time at 260 °C
Symbol
V_RG
V_A
I_FRMS
I_AS
I_FM
I_GS
P_diss
Symbol
V_ISO
R_IO
R_IO
P_tot
T_amb
T_stg
Value
6.0
400
300
5.0
10
200
1000
13.3
Value
5300
≥ 7.0
≥ 7.0
175
≥ 10¹²
≥ 10¹¹
400
5.5
- 55 to + 100
- 55 to + 150
10
Unit
V
V
mA
A
A
mA
mW
mW/°C
Unit
V_RMS
mm
mm
Ω
Ω
mW
mW/°C
°C
°C
sec.
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
I_F = 10 mA
V_R = 3.0 V
V_R = 0, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
V_F
1.2
1.5
V
I_R
10
µA
C_O
50
pF
Output
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward blocking voltage
R_GK = 10 KΩ, T_A = 100 °C,
V_DM
400
V
I_d = 150 µA
Reverse blocking voltage
R_GK = 10 KΩ, T_A = 100 °C,
V_DM
400
V
I_d = 150 µA
On-state voltage
I_T = 300 mA
V_t
1.1
1.3
V
Holding current
R_GK = 27 KΩ, V_FX = 50 V
I_H
500
µA
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Document Number 83610
Rev. 1.6, 26-Oct-04