H11B1_08 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Optocoupler, Photodarlington Output, High Gain, with Base Connection

H11B1/H11B2/H11B3
Vishay Semiconductors ^{Optocoupler, Photodarlington Output,}
High Gain, with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
Isolation test voltage
Between emitter and detector,
refer to standart climate
23 °C/50 % RH, DIN 50014
V_ISO
5300
V_RMS
Creepage
≥7
mm
Clearance
≥7
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
CTI
175
Isolation resistance
Total package dissipation (LED plus detector)
Derate linearly from 25 °C
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
R_IO
≥ 10¹²
Ω
R_IO
≥ 10¹¹
Ω
P_tot
260
mW
3.5
mW/°C
Storage temperature
Operating temperature
Lead soldering time at 260 °C
T_stg
- 55 to + 150
°C
T_amb
- 55 to + 100
°C
10
s
Note
T_amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Reverse current
Junction capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
COUPLER
Saturation voltage collector-emitter
Capacitance (input to output)
TEST CONDITION
I_F = 50 mA
I_F = 10 mA
V_R = 3 V
V_F = 0 V, f = 1 MHz
I_C = 1 mA, I_F = 0 mA
I_E = 100µA, I_F = 0 mA
I_C = 100 µA , I_F = 0 mA
V_CE = 10 V, I_F = 0 mA
I_C = 1 mA, I_C = 1 mA
PART SYMBOL
H11B1
H11B2
H11B3
V_F
V_F
V_F
I_R
C_j
BV_CEO
BV_ECO
BV_CBO
I_CEO
V_CEsat
C_IO
MIN.
30
7.0
30
TYP.
1.1
1.1
1.1
50
0.5
MAX.
1.5
1.5
1.5
10
100
1.0
UNIT
V
V
V
µA
pF
V
V
V
nA
V
pF
Note
T_amb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
DC Current transfer ratio
V_CE = 5 V, I_F = 1 mA
PART
H11B1
H11B2
H11B3
SYMBOL
CTR_DC
CTR_DC
CTR_DC
MIN.
500
200
100
TYP.
MAX.
UNIT
%
%
%
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For technical questions, contact: [e-mail]
Document Number: 83609
Rev. 1.5, 08-May-08