H11B1 Datasheet, PDF (2/7 Pages) Motorola, Inc – 6-Pin DIP Optoisolators Darlington Output(Low Input Current)

H11B1/ H11B2/ H11B3
Vishay Semiconductors
Parameter
Collector current (continuous)
Power dissipation
Derate linearly from 25 °C
Test condition
Coupler
Parameter
Isolation test voltage
Creepage
Clearance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Total package dissipation (LED
plus detector)
Derate linearly from 25 °C
Storage temperature
Test condition
between emitter and detector,
refer to standard climate
23 °C/50 %RH, DIN 50014
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
Operating temperature
Lead soldering time at 260 °C
Symbol
I_C
P_diss
Symbol
V_ISO
R_IO
R_IO
P_tot
T_stg
T_amb
Value
100
150
2.0
Value
5300
≥ 7.0
≥ 7.0
175
≥ 10¹²
≥ 10¹¹
260
3.5
- 55 to + 150
- 55 to + 100
10
Unit
mA
mW
mW/°C
Unit
V_RMS
mm
mm
Ω
Ω
mW
mW/°C
°C
°C
sec.
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reserve current
Junction capacitance
Test condition
I_F = 50 mA
I_F = 10 mA
V_R = 3.0 V
V_F = 0 V, f = 1.0 mHz
Part
Symbol
Min
Typ.
Max
Unit
H11B1
V_F
1.1
1.5
V
H11B2
V_F
1.1
1.5
V
H11B3
V_F
1.1
1.5
V
I_R
10
µA
C_j
50
pF
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-base breakdown
voltage
Collector-emitter leakage
current
Test condition
I_C = 1.0 mA, I_F = 0 mA
I_E = 100 µA, I_F = 0 mA
I_C = 100 µA, I_F = 0 mA
V_CE = 10 V, I_F = 0 mA
Symbol
Min
Typ.
Max
Unit
BV_CEO
30
V
BV_ECO
7.0
V
BV_CBO
30
V
I_CEO
100
nA
www.vishay.com
2
Document Number 83609
Rev. 1.5, 26-Oct-04