H11AA1_11 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, AC Input with Base Connection

H11AA1
Vishay Semiconductors ^{Optocoupler, Phototransistor Output,}
AC Input, with Base Connection
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Forward continuous current
Power dissipation
Derate linearly from 25 °C
I_F
P_diss
± 60
mA
100
mW
1.3
mW/°C
OUTPUT
Power dissipation
Derate linearly from 25 °C
P_diss
200
mW
2.6
mW/°C
Collector emitter breakdown voltage
Emitter base breakdown voltage
BV_CEO
30
V
BV_EBO
5
V
Collector base breakdown voltage
COUPLER
BV_CBO
70
V
Isolation test voltage (RMS)
Between emitter and detector,
referred to standard climate
V_ISO
23 °C/50% RH, DIN 50014
5300
V_RMS
Creepage distance
7
mm
Clearance distance
7
mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
CTI
175
Isolation resistance
Storage temperature range
V_IO = 500 V, T_amb = 25 °C
R_IO
 10¹²

V_IO = 500 V, T_amb = 100 °C
R_IO
 10¹¹

T_stg
- 55 to + 150
°C
Operating temperature range
Lead soldering time at 260 °C
T_amb
- 55 to + 100
°C
T_sld
10
s
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTCS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
OUTPUT
I_F = ± 10 mA
V_F
1.2
1.5
V
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
COUPLER
I_C = 1 mA
I_E = 100 μA
I_C = 100 μA
V_CE = 10 V
BV_CEO
30
BV_EBO
5
BV_CBO
70
I_CEO
V
V
V
5
100
nA
Collector emitter saturation voltage
I_F = ± 10 mA, I_C = 0.5 mA
V_CEsat
0.4
V
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
DC current transfer ratio
Symmetry
(CTR at + 10 mA)/(CTR at - 10 mA)
I_F = ± 10 mA, V_CE = 10 V
CTR_DC
20
0.33
TYP.
1
MAX.
3
UNIT
%
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2
For technical questions, contact: [e-mail]
Document Number: 83608
Rev. 1.7, 23-Feb-11