GSD2004S Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual In-Series Small-Signal High-Voltage Switching Diode

GSD2004S
Vishay Semiconductors
VISHAY
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse breakdown voltage
I_R = 100 µA
V_BR
300
V
Leakage current
V_R = 240 V
I_R
100
nA
V_R = 240 V, T_j = 150 °C
I_R
100
µA
Forward voltage
I_F = 20 mA
V_F
0.83
0.87
V
I_F = 100 mA
V_F
1.00
V
Diode capacitance
V_F = V_R = 0, f = 1 MHz
C_tot
5.0
pF
Reverse recovery time
I_F = I_A = 30 mA, I_rr = 3.0 mA,
t_rr
R_L = 100 Ω
50
ns
1) _{Device on Fiberglass Substrate, see layout}
Layout for R_thJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
12 (0.47)
15 (0.59)
0.8 (0.03)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
www.vishay.com
2
Document Number 85728
Rev. 1.3, 08-Jul-04