GMF05MC Datasheet, PDF (2/4 Pages) Vishay Siliconix – Low Capacitance ESD Protection Diode Array

GMF05MC
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Reverse stand-off voltage
V_RWM
Reverse breakdown voltage
I_t = 1 mA
V_BR
6
Reverse leakage current
V_RWM = 5 V
I_R
Clamping voltage
I_PP = 1 A, 8/20 µs waveform
V_C
I_PP = 7 A, 8/20 µs waveform
V_C
Peak forward voltage
I_F = 1 A, 8/20 µs waveform
V_F
1.5
Junction capacitance between I/ V_R = 0 V, f = 1 MHz
C_j
O pins and Gnd
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
VISHAY
Max
Unit
5
V
V
0.2
µA
9
V
12
V
V
75
pF
100
75
50
25
0
0
18687
25 50 75 100 125 150 175
TA - Ambient Temperature (° C)
Figure 1. Pulse Derating Curve
100
10
1
0.1
0.01
0.1
18668
1
10
100
t_d - Pulse Duration ( µ A )
1000
Figure 3. Non -Repetitive Peak Pulse Power vs. Pulse Time
110
100
90
80
70
60
50
40
30
20
10
0
0
18688
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
td
=
IPP
2
5 10 15 20 25 30
t - Time ( µs)
Figure 2. Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
0
18669
f = 1 MHz
1
2
3
4
5
6
V_R - Reverse Voltage ( V )
Figure 4. Typical Capacitance vs. Reverse Voltage
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2
Document Number 85855
Rev. 1.1, 02-Mar-05