GMF05LC-HS3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – 5-Line ESD-Protection Diode Array in LLP75-6A

GMF05LC-HS3
Vishay Semiconductors
BiAs-Mode (5-line Bidirectional Asymmetrical protection mode)
With the GMF05LC-HS3 up to 5 signal- or data-lines (L1 - L5) can be protected against voltage transients.
With pin 2 connected to ground and pin 1; 3 up tp pin 6 connected to a signal- or data-line which has to be
protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified
Maximum Reverse Working Voltage (V_RWM) the protection diode between data line and ground offer a high
isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V_C) is defined by the BReakthrough Voltage (V_BR) level
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the for-
ward direction of the protection diode. The low Forward Voltage (V_F) clamps the negative transient close to the
ground level.
Due to the different clamping levels in forward and reverse direction the GMF05LC-HS3 clamping behaviour
is Bidirectional and Asymmetrical (BiAs).
L1
L5
1
5
2
4
L4
L2
L3
3
3
20739
Electrical Characteristics
Ratings at 25 °C ambient temperature, unless otherwise specified
GMF05LC-HS3
BiAs mode: each input (pin 1, 3, 4, 5, 6) to ground (pin 2)
Parameter
Test conditions/remarks
Symbol
Min.
Typ.
Max.
Unit
Protection paths
number of line which can be protected
N lines
5
lines
Reverse stand-off voltage
at I_R = 1 µA
V_RWM
5
V
Reverse current
at V_R = V_RWM = 5 V
I_R
0.01
0.1
µA
Reverse breakdown voltage
at I_R = 1 mA
V_BR
6
8
V
at I_PP = 1 A; acc. IEC 61000-4-5
V_C
Reverse clamping voltage
at I_PP = I_PPM = 5 A; acc. IEC 61000-4-5
V_C
8
9.5
V
11.5
12.5
V
at I_F = 1 A; acc. IEC 61000-4-5
V_F
Forward clamping voltage
at I_PP = I_PPM = 5 A; acc. IEC 61000-4-5
V_F
1.5
2
V
3.1
4
V
Line capacitance
at V_R = 0 V; f = 1 MHz
C_D
at V_R = 2.5 V; f = 1 MHz
C_D
43
50
pF
25
pF
If a higher surge current or Peak Pulse current (I_PP) is needed, some protection diodes in the GMF05LC-HS3
can also be used in parallel in order to "multiply" the performance.
If two diodes are switched in parallel you get
• double surge power = double peak pulse current (2 x I_PPM)
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line Capacitance (2 x C_D)
• double Reverse leakage current (2 x I_R)
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Document Number 85655
Rev. 1.7, 22-Sep-08