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GI910 Datasheet, PDF (2/4 Pages) General Semiconductor – MEDIUM-SWITCHING PLASTIC RECTIFIER
GI910 thru GI917
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL GI910 GI911 GI912 GI914
Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse
recovery time
Maximum reverse
recovery current
Typical junction capacitance
3.0 A TA = 25 °C
9.4 A TJ = 175 °C
TA = 25 °C
TA = 100 °C
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs,
Irr = 10 % IRM
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs,
Irr = 10 % IRM
4.0 V, 1 MHz
VF
IR
trr
IRM(REC)
CJ
1.25
1.10
10
300
750
2.0
28
GI916
GI917
UNIT
V
μA
ns
A
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GI910 GI911
GI912
GI914
GI916
GI917
UNIT
Typical thermal resistance
RθJA (1)
RθJL (1)
22
°C/W
8.0
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
GI916-E3/54
1.1
54
GI916-E3/73
1.1
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
4.0
Ipk
IAV
=π
0.375" (9.5 mm)
Lead Length
3.0
0.8" x 0.8" x 0.04"
(20 mm x 20 mm x 1 mm)
Copper Heatsinks
2.0
Capacitive
Loads
1.0
Ipk
IAV
=
5.0
10
20
0
30 50 70 90 110 130 150 170
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curves
1000
8.3 ms Single Half Sine-Wave
TJ = 25 °C
100
Non-Repetitive
Repetitive
10
1
TJ = 150 °C
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Peak Forward Surge Current
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For technical questions within your region, please contact one of the following: Document Number: 88631
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 10-Nov-09