GCDA15C-1 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Low Capacitance Bidirectional ESD Protection Diodes

GCDA15C-1
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse stand-off voltage
V_RWM
Reverse breakdown voltage
I_R = 1 mA
V_BR
16
Reverse leakage current
V_RW = 15 V
I_R
Capacitance
V_R = 0 V, f = 1 MHz
C_D
Clamping voltage
I_PP = 1 A, 8/20 µs waveform
V_C
(Fig. 4)
I_PP = 8 A, 8/20 µs waveform
V_C
(Fig. 4)
15
V
V
100
nA
5
pF
21
V
30
V
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
7
f = 1 MHz
6
5
4
3
2
1
0
0
5
10
15
18910
V_R - Reverse V oltage (V)
Figure 1. Typical Capacitance vs. Reverse Voltage
40
35
30
25
20
15
10
5
0
0
18912
2 4 6 8 10 12 14
I _PP - Peak Pulse Current ( A )
Figure 3. Typical Clamping Voltage vs. Peak Pulse Current
22
20
18
16
14
12
10
8
6
4
2
0
0.01
18911
0.1
1
10 100 1000
I_R - Reverse Current ( µA )
Figure 2. Typical Reverse Voltage vs. Reverse Current
150
125
rise time
= 8 µs
100
100 % = I_PP
75
50
50 % derating time
25
= 20 µs
0
0
18913
5 10 15 20 25 30 35
Time (µs )
Figure 4. Pulse Waveform 8/20 µs acc. IEC 61000 - 4 - 5
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2
Document Number 85856
Rev. 1.1, 19-Oct-04