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GBU4A_15 Datasheet, PDF (2/5 Pages) Rugao Dachang Electronics Co., Ltd – Single-phase Silicon Bridge Rectifier
GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT
Maximum
instantaneous forward
4.0 A
VF
voltage drop per diode
1.0
V
Maximum DC reverse
TA = 25 °C
current at rated DC
IR
blocking voltage per diode TA = 125 °C
5.0
μA
500
Typical junction 
capacitance per diode
4 V, 1 MHz
CJ
57
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT
Typical thermal resistance
RJA (2)
RJC (1)
22
°C/W
4.2
Notes
(1) Units case mounted on aIuminum plate heatsink
(2) Units mounted in free air, no heatsink on PCB, 0.5" x 0.5" (12 mm x 12 mm) copper pads, 0.375" (9.5 mm) lead length
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
GBU4J-E3/45
3.857
GBU4J-E3/51
3.857
PREFERRED PACKAGE CODE
45
51
BASE QUANTITY
20
250
DELIVERY MODE
Tube
Paper tray
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
4.0
Heatsink Mounting, TC
1.6 x 1.6 x 0.06" Thickness
(4.0 x 4.0 x 0.15 cm) Al. Plate
3.0
2.0
1.0 P.C.B. Mounting, TA
0.47 x 0.47" (12 x 12 mm) Copper Pads
0.375" (9.5 mm) Lead Length
60 Hz Resistive or Inductive Load
0
0
50
100
150
Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
150
TJ = TJ max.
Single Sine-Wave
100
50
1.0 Cycle
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 05-Aug-15
2
Document Number: 88614
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