FEP16GT-E3 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Common-Cathode Ultrafast Plastic Rectifier

FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
FEP
16AT
FEP
16BT
FEP
16CT
FEP
16DT
FEP
16FT
FEP
16GT
FEP
16HT
FEP
16JT
UNIT
Maximum instantaneous
forward voltage per diode ⁽¹⁾
at 8.0 A
V_F
0.95
1.30
1.50
V
Maximum DC reverse current
per diode at rated DC
blocking voltage
T_C = 25 °C
T_C = 100 °C
I_R
10
500
µA
Maximum reverse recovery at I_F = 0.5 A, I_R = 1.0 A,
time per diode
I_rr = 0.25 A
t_rr
Typical junction capacitance
per diode
at 4.0 V, 1 MHz
C_J
35
85
50
ns
60
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
Typical thermal resistance from junction to case per diode R_θJC
2.2
FEPF
3.1
FEPB
2.2
UNIT
°C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
TO-220AB
FEP16JT-E3/45
ITO-220AB
FEPF16JT-E3/45
TO-263AB
FEPB16JT-E3/45
TO-263AB
FEPB16JT-E3/81
UNIT WEIGHT (g)
1.85
1.97
1.35
1.35
PACKAGE CODE
45
45
45
81
BASE QUANTITY
50/Tube
50/Tube
50/Tube
800/Reel
DELIVERY MODE
Tube
Tube
Tube
Tape Reel
www.vishay.com
2
Document Number 88596
22-Aug-06