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ESH2B Datasheet, PDF (2/4 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifiers
ESH2B, ESH2C & ESH2D
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol Value
Unit
Maximum instantaneous forward at IF = 2 A(1)
voltage
VF
0.93
V
Maximum DC reverse current at TA = 25 °C
rated DC blocking voltage
TA = 125 °C
IR
2.0
µA
50
Maximum reverse recovery time at IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
25
ns
Typical reverse recovery time
at IF = 2 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C
trr
35
ns
TJ = 100 °C
55
Typical stored charge
at IF = 2 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C
Qrr
20
nC
TJ = 100 °C
35
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
30
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C, unless otherwise specified
Parameter
Symbol
Typical thermal resistance(1)
RθJA
RθJL
Note:
(1) Units mounted on P.C.B. with 8.0 x 8.0 mm land areas.
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
2.5
2
1.5
1
0.5
0
0
25 50 75 100 125 150 175
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
ESH2B
ESH2C
65
20
ESH2D
Unit
°C/W
60
50
40
30
20
10
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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2
Document Number 84649
17-Oct-05