ES07B_15 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Ultrafast Rectifier Surface Mount

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ES07B, ES07D
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Instaneous forward voltage
I_F = 1 A ⁽¹⁾
ES07B
V_F
ES07D
V_F
Maximum DC reverse current at
T_A = 25 °C
ES07B
I_R
ES07D
I_R
rated DC blocking voltage
T_A = 100 °C
ES07B
I_R
ES07D
I_R
Reverse recovery time
I_F = 0.5 A, I_R = 1 A, I_rr = 0.25 A
ES07B
ES07D
t_rr
t_rr
Typical capacitance
4 V, 1 MHz
ES07B
C_j
ES07D
C_j
Note
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycleï€} 

TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
TYP.
4
4
MAX.
0.98
0.98
10
10
50
50
25
25
UNIT
V
V
μA
μA
μA
μA
ns
ns
pF
pF
10
1
0.1
Typical at 150 °C
0.01
Typical at 100 °C
0.001
0
18242
Typical at 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_F (V)
Fig. 1 - Typical Forward Characteristics
7
6
5
4
3
2
1
0
0.1
18244
f = 1 MHz
1
10
100
V_R (V)
Fig. 3 - Typical Diode Capacitance vs. Reverse Voltage
1.4
Tie point temperature
1.2
1.0
0.8
0.6
0.4
Ambient temperature
0.2
0
0
18243
25 50 75 100 125 150
Temperature (Ambient or Tie) (°C)
Fig. 2 - Forward Current Derating Curve
1000
100
10
1
0.1
0.01
0
18245
T_j = 150 °C
T_j = 125 °C
T_j = 100 °C
T_j = 75 °C
T_j = 50 °C
T_j = 25 °C
T_j = 0 °C
T_j = - 50 °C
40
80 120 160 200
V_R (V)
Fig. 4 - Typical Reverse Characteristics
Rev. 2.0, 19-Feb-15
2
Document Number: 85737
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