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ES07B-M Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Surface Mount Ultrafast Diodes
ES07B-M, ES07D-M
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air 1)
Operating junction and storage
temperature range
Note:
1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (≥ 40 µm thick)
Symbol
RthJA
Tj, Tstg
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Maximum instantaneous
forward voltage
1 A 1)
VF
Maximum DC reverse current at
TA = 25 °C
IR
rated DC blocking voltage
TA = 100 °C
IR
Reverse recovery time
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
Typical capacitance
4 V, 1 MHz
Cj
Note:
1) Pulse test, 300 µs pulse with 1 % duty cycle
Value
Unit
180
K/W
- 55 to + 150
°C
Typ.
Max.
Unit
0.98
V
10
µA
50
µA
25
ns
4
pF
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
10
1
0.1
Typical at 150 °C
0.01
Typical at 100 °C
Typical at 25 °C
0.001
0
18242
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF (V)
Figure 1. Typical Forward Characteristics
1.4
Tie point temperature
1.2
1.0
0.8
0.6
0.4
Ambient temperature
0.2
0
0
18243
25 50 75 100 125 150
Temperature (Ambient or Tie) (°C)
Figure 2. Forward Current Derating Curve
Document Number 85192 For technical questions within your region, please contact one of the following:
Rev. 1.1, 01-Sep-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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