DG3015 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Low-Voltage, Low rON, Dual DPDT Analog Switch

DG3015
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Limit
Unit
Reference V+ to GND
IN, COM, NC, NO^a
- 0.3 to + 6
V
- 0.3 to (V+ + 0.3 V)
Current (Any terminal except NO, NC or COM)
30
Continuous Current (NO, NC or COM)
± 150
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 250
Storage Temperature
Package Solder Reflow Conditions^b
(D Suffix)
IR/Convection
- 65 to 150
°C
250
Power Dissipation (Packages)^c
MICRO FOOT: 16 Bump (4 x 4 mm)^d
719
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. Refer to IPC/JEDEC (J-STD-020B)
c. All bumps welded or soldered to PC Board.
d. Derate 9.0 mW/°C above 70 °C.
Permanent damage to the device may occur when the ”Absolute Maximum Ratings” are exceeded. These stress ratings do not indicate conditions for which the device
is intended to be functional. Functionality is only guaranteed to the conditions specified by the parametric table within the document.
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %,V_IN = 0.4 V or 2.0 V^e
Limits
- 40 to 85 °C
Temp^a Min^b Typ^c Max^b Unit
Analog Signal Range^d
On-Resistance
r_ON Flatness
r_ON Match
Switch Off Leakage Current
Channel-On Leakage Current
V_NO, V_NC,
V_COM
r_ON
r_ON
Flatness
Δr_ON
I_NO(off)
I_NC(off)
I_COM(off)
I_COM(on)
V+ = 2.7 V, V_COM = 0.2 V/1.5 V
I_NO, I_NC = 100 mA
V+ = 2.7 V, V_COM = 0 to V+,
I_NO, I_NC = 100 mA
V+ = 3.3 V,
V_NO, V_NC = 1 V/3 V, V_COM = 3 V/1 V
V+ = 3.3 V, V_NO, V_NC = V_COM = 1 V/3 V
Full
0
V+
V
Room
Full
Room
0.80 1.2
1.3
Ω
0.16
Room
0.15
Room - 2
2
Full
- 20
20
Room - 2
Full
- 20
Room - 2
Full
- 20
2
nA
20
2
20
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
V_INH
V_INL
C_in
I_INL or I_INH
V_IN = 0 or V+
Full
2
Full
V
0.4
Full
4
pF
Full
-1
1
µA
Turn-On Time
Turn-Off Time
t_ON
Room
Full
t_OFF
V_NO or V_NC = 2.0 V, R_L = 300 Ω, C_L = 35 pF Room
Full
40
65
67
35
60
ns
62
Break-Before-Make Time
t_d
Full
1
3
Charge Injection^d
Q_INJ
C_L = 1 nF, V_GEN = 0 V, R_GEN = 0 Ω
Room
7
pC
Off-Isolation^d
Crosstalk^d
OIRR
X_TALK
R_L = 50 Ω, C_L = 5 pF, f = 1 MHz
Room
Room
- 67
- 70
dB
N_O, N_C Off Capacitance^d
Channel-On Capacitance^d
C_NO(off)
C_NC(off)
C_NO(on)
C_NC(on)
V_IN = 0 or V+, f = 1 MHz
Room
Room
Room
Room
63
67
200
196
pF
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Document Number: 72962
S-70853-Rev. C, 30-Apr-07