DG271B Datasheet, PDF (2/4 Pages) Vishay Siliconix – High-Speed Quad Monolithic SPST CMOS Analog Switch

DG271B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs^a V_S, V_D . . . . . . . . . . . . . . . . . . . . . . . . . (V−) −2 V to (V+) +2 V or
20 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(DY Suffix) . . . . . . . . . . . . . . . . . . . −65 to 150_C
(CJ Suffix) . . . . . . . . . . . . . . . . . . . −65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIP^c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Plastic Narrow SOIC^d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Notes:
a. Signals on S_X, D_X, or IN_X exceeding V+ or V− will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS^a
Parameter
Analog Switch
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V− = −15 V
V_IN = 2.4 V, 0.8 V^f
Temp^b
C, D Suffix
0 to 70_C
−40 to 85_C
Min^d Typ^c Max^d
Analog Signal Range^e
Drain-Source On-Resistance
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
V_ANALOG
r_DS(on)
I_S(off)
I_D(off)
I_D(on) +
I_S(on)
I_S = 1 mA, V_D = "10 V
V_D = "14 V, V_S = #14 V
V_S = V_D = "14 V
Full
−15
15
Room
Full
32
50
75
Room
−1
"0.05
1
Full
−20
20
Room
−1
"0.05
1
Full
−20
20
Room
−1
"0.05
1
Full
−20
20
Input Current with Voltage High
I_INH
Input Current with Voltage Low
I_INL
Dynamic Characteristics
V_IN = 2 V
V_IN = 15 V
V_IN = 0 V
Full
−1
0.010
1
Full
−1
0.010
1
Full
−1
0.010
1
Turn-On Time
Turn-Off Time
Charge Injection
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Off Isolation
Crosstalk
Supply
t_ON
t_OFF
Q
C_S(off)
C_D(off)
C_D(_on)
OIRR
X_TALK
V_S = "10 V
See Figure 3
C_L = 1 nF, V_S = 0 V
V_gen = 0 V, R_gen = 0 W
See Figure 3
V_S = 0 V, V_IN = 5 V
f = 1 MHz
V_D = V_S = 0 V, V_IN = 0 V
C_L = 10 pF, R_L = 1 kW
f = 100 kHz
See Figures 4 and 5
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
55
65
80
50
65
80
−5
8
8
30
85
100
Positive Supply Current
Negative Supply Current
I+
All Channels On or Off
Room
Full
5.5
7.5
9
I−
V_IN = 5 V or 0 V
Room
−6
−3.4
Full
−8
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
Unit
V
W
nA
mA
ns
pC
pF
dB
mA
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Document Number: 70966
S-42137—Rev. B, 15-Nov-04