DG2718 Datasheet, PDF (2/7 Pages) Vishay Siliconix – 0.45-
CMOS, 1.65-V to 3.6-V, Dual DPDT Analog Switch

DG2718
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +4.0 V
IN, COM, NC, NO^a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Current (Any terminal except NO, NC or COM) . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current (NO, NC, or COM) . . . . . . . . . . . . . . . . . . . . . "300 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "500 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Package Solder Reflow Conditions^d
16-Pin QFN (3 x 3 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250°C
Power Dissipation (Packages)^b
QFN-16^c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1385 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 17.3 mW/_C above 70_C
d. Manual soldering with iron is not recommended for leadless components.
The QFN is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in
manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder
interconnection.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 1.8 V)
Parameter
Analog Switch
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 1.8 V, V_IN = 0.4 or 1.1 V^e
Analog Signal Range^d
On-Resistance^d
V_NO, V_NC,
V_COM
r_ON
V+ = 1.8 V, V_COM = 0.2 V/0.9 V, I_NO, I_NC = 100 mA
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
V_INH
V_INL
C_in
I_INL or I_INH
V_IN = 0 or V+
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection^d
Off-Isolation^d
Crosstalk^d
N_O, N_C Off Capacitance^d
Channel-On Capacitance^d
Power Supply
Power Supply Current
t_ON
t_OFF
t_d
Q_INJ
OIRR
X_TALK
C_NO(off)
C_NC(off)
C_NO(on)
C_NC(on)
I+
V_NO or V_NC = 1.5 V, R_L = 50 W, C_L = 35 pF
C_L = 1 nF, V_GEN = 0 V, R_GEN = 0 W
R_L = 50 W, C_L = 5 pF, f = 100 kHz
V_IN = 0 or V+, f = 1 MHz
V_IN = 0 or V+
Temp^a
Full
Room
Full
Full
Full
Full
Full
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Full
Limits
–40 to 85_C
Min^b Typ^c Max^b
0
V+
0.7
2.0
2.8
1.1
0.4
6
–1
1
62
94
92
24
52
55
16
65
–74
–74
108
108
225
225
1.0
Unit
V
W
V
pF
mA
ns
pC
dB
pF
mA
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Document Number: 72677
S–52186—Rev. B, 17-Oct-05