DG2711_08 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Low-Voltage, Sub-Ohm, SPDT Analog Switch

DG2711
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO^a
Continuous Current (NO, NC and COM Pins)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
(D Suffix)
Power Dissipation (Packages)^b
6-Pin SO70^c
Limit
Unit
- 0.3 to + 4
V
- 0.3 to (V+ + 0.3)
± 200
mA
± 300
- 65 to 150
°C
250
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 1.8 V)
Parameter
Analog Switch
Analog Signal Range^d
On-Resistance
Switch Off Leakage Current^f
Channel-On Leakage Current^f
Digital Control
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 1.8 V, ± 10 %, V_IN = 0.4 V or 1.0 V^e
Limits
- 40 to 85 °C
Temp^a Min^b Typ^c Max^b Unit
V_NO, V_NC,
V_COM
Full
0
V+
V
r_ON
V+ = 1.8 V, V_COM = 0.9 V
I_NO, I_NC = 100 mA
Room
Full
0.8
2.0
2.5
Ω
I_NO(off)
I_NC(off)
I_COM(off)
V+ = 2.2 V,
V_NO, V_NC = 0.2 V/2 V, V_COM = 2 V/0.2 V
Room _{- 1}
Full^d
- 10
Room _{- 1}
Full^d
- 10
1
10
1
10
nA
I_COM(on)
V+ = 2.2 V, V_NO, V_NC = V_COM = 0.2 V/2 V
Room _{- 1}
Full^d
- 10
1
10
Input High Voltage
Input Low Voltage
Input Capacitance^d
Input Current^f
Dynamic Characteristics
Turn-On Time^d
Turn-Off Time^d
V_INH
V_INL
C_in
I_INL or I_INH
V_IN = 0 or V+
Full
1.0
Full
V
0.4
Full
5
pF
Full
-1
1
µA
Room
t_ON
Full^d
t_OFF
V_NO or V_NC = 1.5 V, R_L = 300 Ω, C_L = 35 pF
Figures1 and 2
Room
Full
36
60
62
22
42
ns
44
Break-Before-Make Time^d
t_d
Room
3
Charge Injection^d
Q_INJ
C_L = 1 nF, V_GEN = 0 V, R_GEN = 0 Ω, Figure 3 Room
20
pC
Off-Isolation^d
Crosstalk^d
OIRR
Room
- 56
X_TALK
R_L = 50 Ω, C_L = 5 pF, f = 1 MHz
Room
- 56
dB
NO, NC Off Capacitance^d
C_NO(off)
C_NC(off)
V_IN = 0 or V+, f = 1 MHz
Room
73
pF
Channel-On Capacitance^d
C_ON
Room
167
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2
Document Number: 73200
S-70852-Rev. B, 30-Apr-07