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DG2535_08 Datasheet, PDF (2/7 Pages) Vishay Siliconix – 0.35-Ω Low-Voltage Dual SPDT Analog Switch
DG2535/DG2536
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Referenced V+ to GND
IN, COM, NC, NOa
Continuous Current (NO, NC, COM)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
ESD per Method 3015.7
Power Dissipation (Packages)b
MSOP-10c
DFN-10d
Limit
Unit
- 0.3 to + 6
V
- 0.3 to (V+ + 0.3)
± 300
mA
± 500
- 65 to 150
°C
>2
kV
320
mW
1191
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/°C above 70 °C
d. Derate 14.9 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatnessd
On-Resistance
Match Between Channelsd
Switch Off
Leakage Current
Channel-On
Leakage Current
Digital Control
Input High Voltaged
Input Low Voltage
Input Capacitance
Input Current
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 Ve
Tempa
VNO, VNC
VCOM
rON
rON
Flatness
V+ = 2.7 V, VCOM = 0.6 V/1.5 V, INO, INC = 100 mA
Full
Room
Full
Room
ΔrDS(on)
Room
INO(off)
INC(off)
ICOM(off)
ICOM(on)
V+ = 3.3 V
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
Room
Full
Room
Full
Room
Full
VINH
Full
VINL
Full
Cin
Full
IINL or IINH
VIN = 0 or V+
Full
Limits
- 40 to 85 °C
Minb Typc Maxb
0
V+
0.35 0.5
0.6
0.09 0.2
0.05
-1
1
- 10
10
-1
1
- 10
10
-1
1
- 10
10
1.4
0.5
10
1
1
Unit
V
Ω
nA
V
pF
µA
www.vishay.com
2
Document Number: 72939
S-71009-Rev. E, 14-May-07