DG2531 Datasheet, PDF (2/8 Pages) Vishay Siliconix – 0.4-ohm Low-Voltage Dual SPDT Analog Switch

DG2531/DG2532
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Reference V+ to GND
IN, COM, NC, NO^a
Continuous Current (NO, NC, COM)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
- 0.3 to + 6
V
- 0.3 to (V+ + 0.3 V)
± 300
mA
± 500
Storage Temperature
(D Suffix)
- 65 to 150
°C
PESD per Method 3015.7
>2
kV
Power Dissipation (Packages)^b
MSOP-10^c
320
mW
Note
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/°C above 70 °C.
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Analog Signal Range^d
On-Resistance
r_ON Flatness^d
On-Resistance
Match Between Channels^d
Switch Off Leakage Current
Symbol
V_NO, V_NC,
V_COM
r_ON
r_ON
Flatness
Δr_DS(on)
I_NO(off)
I_NC(off)
I_COM(off)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %,V_IN = 0.5 V or 1.4 V^e
V+ = 2.7 V, V_COM = 0.6 V/1.5 V
I_NO, I_NC = 100 mA
V+ = 3.3 V,
V_NO, V_NC = 0.3 V/3 V, V_COM = 3 V/0.3 V
Channel-On Leakage Current
Digital Control
Input High Voltage^d
Input Low Voltage
Input Capacitance
Input Current
I_COM(on)
V+ = 3.3 V, V_NO, V_NC = V_COM = 0.3 V/3 V
V_INH
V_INL
C_in
I_INL or I_INH
V_IN = 0 or V+
Limits
- 40 to 85 °C
Temp^a Min^b Typ^c Max^b Unit
Full
0
Room
Full
V+
V
0.4
0.6
0.7
Room
0.12 0.2
Ω
Room
Room - 1
Full
- 10
Room - 1
Full
- 10
Room - 1
Full
- 10
0.05
1
10
1
10
nA
1
10
Full
1.4
Full
V
0.5
Full
7
pF
Full
1
1
µA
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2
Document Number: 72742
S-60005–Rev. B, 16-Jan-06